digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 3N211-3n213 dual-gate vhf amplifier n-channel - depletion maximum ratings rating symbol 3N211 3n212 3n213 unit drain source voltage v ds 27 35 vdc drain gate voltage v dg1 v dg2 35 35 40 40 vdc drain current i d 50 madc gate current i g1 i g2 10 10 madc total device dissipation @ t a = 25c derate above 25c p d 360 2.4 mw mw/c total device dissipation @ t c = 25c derate above 25c p d 1.2 8.0 watt mw/c lead temperature, 1/16? from seated surface for 10 seconds t l 300 c junction temperature range t j -65 to +175 c storage temperature range t stg -65 to +175 c electrical characteristics (t a = 25 unless otherwise noted) characteristics symbol min max unit off characteristics drain source breakdown voltage (1) (i d = 10 adc, v g1s = v g2s = -4.0 vdc) 3N211, 3n212 3n213 v (br)dsx 25 30 - - vdc instantaneous drain source breakdown voltage (i d = 10 adc, v g1s = v g2s = -4.0 vdc) 3N211, 3n212 3n213 v (br)dsx 27 35 - - vdc gate 1 ? source breakdown voltage (2) (i g1 = 10 madc, v g2s = v ds = 0) v (br)g1so 6.0 - vdc gate 2 ? source breakdown voltage (2) (i g2 = 10 madc, v g1s = v ds = 0) v (br)g2so 6.0 - vdc gate 1 leakage current (v g1s = 5.0 vdc, v g2s = v ds = 0) (v g1s = -5.0 vdc, v g2s = v ds = 0, t a = 150c) i g1ss - - 10 -10 nadc adc gate 2 leakage current (v g2s = 5.0 vdc, v g1s = v ds = 0) (v g2s = -5.0 vdc, v g1s = v ds = 0, t a = 150c) i g2ss - - 10 -10 nadc adc gate 1 to source cutoff voltage (v ds = 15 vdc, v g2s = 4.0 vdc, i d = 20 adc) 3N211, 3n213 3n212 v g1s(off) -0.5 -0.5 -5.5 -4.0 vdc gate 2 source to cutoff voltage (v ds = 15 vdc, v g1s = 0, i d = 20 adc) 3N211 3n212, 3n213 v g2s(off) -0.2 -0.2 -2.5 -4.0 vdc on characteristics zero gate voltage drain current (3) (v ds = 15 vdc, v g1s = 0, v g2s = 4.0 vdc) i dss 6.0 40 madc small signal characteristics forward transfer admittance (4) (v ds = 15 vdc, v g2s = 4.0 vdc, v g1s = 0, f = 1.0 khz) 3N211, 3n212 3n213 ? yfs ? 17 15 40 35 mmhos reverse transfer capacitance (v ds = 15 vdc, v g2s = 4.0 vdc, i d = 1.0 madc, f = 1.0 mhz) c rss 0.005 0.05 pf functional characteristics noise figure (v dd = 18 vdc, v gg = 7.0 vdc, f = 200 mhz) (v dd = 24 vdc, v gg =6.0 vdc, f = 45 mhz) 3N211 3N211, 3n213 nf - - 3.5 4.0 db sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120706
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 3N211-3n213 dual-gate vhf amplifier n-channel - depletion electrical characteristics (t a = 25 unless otherwise noted) characteristics symbol min max unit functional characteristics (con?t) common source power gain (v dd = 18 vdc, v gg = 7.0 vdc, f = 200 mhz) (v dd = 24 vdc, v gg = 6.0 vdc, f = 45 mhz) (v dd = 24 vdc, v gg = 6.0 vdc, f = 45 mhz) (v dd = 18 vdc, f lo = 245 mhz, f rf = 200 mhz) 3N211 3N211 3n213 3n212 g ps g c (6) 24 29 27 21 35 37 35 28 db bandwidth (v dd = 18 vdc, v gg = 7.0 vdc, f = 200 mhz) (v dd = 18 vdc, f lo = 245 mhz, f rf = 200 mhz) (v dd = 24 vdc, v gg = 6.0 vdc, f = 45 mhz) 3N211 3n212 3N211, 3n213 bw 5.0 4.0 3.5 12 7.0 6.0 mhz gain control gate supply voltage (5) (v dd = 18 vdc, gps = -30 db, f = 200 mhz) (v dd = 24 vdc, gps = -30 db, f = 45 mhz) 3N211 3N211, 3n213 v gg(gc) - - -2.0 1.0 vdc (1) measured after five seco nds of applied voltage. (2) all gate breakdown voltages are measured while the device is conducting rated gate current. this ensures that the gate voltage limiting network is functioning properly. (3) pulse test: pulse width = 300s, duty cycle 2.0%. (4) this parameter must be measured with bias voltages applied for less than 5 seconds to avoid overheating. the signal is applied to gate 1 with gate 2 at ac ground. (5) gps is defined as the change in g ps from the value at v gg = 7.0 volts (3N211) and v gg = 6.0 volts (3n213). (6) power gain conversion. amplitude at input from local oscillator is adjusted for maximum g c . to-72 inches millimeters dim min max min max a - 0.230 - 5.840 b - 0.195 - 4.950 c - 0.210 - 5.330 d - 0.021 - 0.530 e - 0.030 - 0.760 f - 0.019 - 0.480 g 0.100 bsc 2.540 bsc h - 0.046 - 1.170 j - 0.0480 - 1.220 k 0.500 - 12.700 - l 0.250 - 6.350 - m 45c bsc 45c bsc n 0.050 bsc 1.270 bsc p - 0.050 - 1.270 available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120706
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